INTRODUCTION TO ELECTRONICS ENGINEERING — Major (End Semester) 2023 question paper
MMMUT Chemical Engineering previous year question paper for INTRODUCTION TO ELECTRONICS ENGINEERING (BEC - 106), semester 1, Major (End Semester) 2023. All 17 questions are listed below, each with a written answer on Nexsus.
Paper details
Subject: INTRODUCTION TO ELECTRONICS ENGINEERING (BEC - 106)
Branch: Chemical Engineering
Semester: 1
Exam: Major (End Semester) 2023
Questions: 17
Questions asked in INTRODUCTION TO ELECTRONICS ENGINEERING Major (End Semester) 2023
Q1(a). What are semiconductor materials? Explain difference between semiconductor, conductor and insulating materials with example. [5 marks]
Q1(b). The forward current through a Silicon diode is $10\text{ mA}$ at room temperature ($27^\circ\text{C}$). The corresponding forward voltage is $0.75\text{ volts}$. Calculate the reverse saturation current $I_0$.
Q1(c). Compare Extrinsic & Intrinsic semiconductor. Complete the following table with respect to Extrinsic semiconductor: Types of Extrinsic semiconductorTypes of impurities addedMajority charge carrierp-typen-type 5 [5 marks]
Q1(d). What is CRO? Discuss about CRT and its internal structure. [5 marks]
Q1(e). What is digital voltmeter and digital multimeter? Explain the working of digital multimeter with schematic diagram [5 marks]
Q1(f). Compare the following: i. BJT and JEFT. ii. PMOS and NMOS. [5 marks]
Q2(a). Explain the V-I characteristics of diode. Explain the effect of temperature on a p-n junction. Define forward static and dynamic resistance of a diode. [5 marks]
Q2(b). What is a Clipper and Clamper circuit? Draw its diagram and explain its working.At $300\text{K}$, the intrinsic carrier concentration of silicon is $1.5 \times 10^{16}/\text{m}^3$. If the electron and the hole mobilities are $0.13$ and $0.05\text{ m}^2/\text{v-sec}$ respectively. Determine the intrinsic resistivity of Si at $300\text{K}$. [5 marks]
Q2(c). Discuss the need for biasing in the transistor. Why is transistor called the current controlled device? Explain the working of PNP & NPN transistor with the symbolic representation. [5 marks]
Q2(d). For a transistor, $\beta = 45$ and voltage drop across $1\text{ k}\Omega$ which is connected in the collector circuit is $1\text{ volt}$. Find the base current for common emitter [5 marks]
Q3(a). | Explain the working of Depletion type and enhancement type MOSFET with all the necessary diagrams and its symbols for n-channel and p-channel. [5 marks]
Q3(b). Explain construction, working and characteristics of N-channel JFET. When $V_{GS}$ of JFET changes from $-3.1\text{ V}$ to $-3\text{ V}$, the drain current changes from $1\text{ mA}$ to $1.3\text{ mA}$. What is the value of transconductance? [5 marks]
Q3(c). Explain the characteristics of Ideal Op-amp and draw the circuit of differential op-amp. Derive the expression for voltage gain [5 marks]