N Nexsus

Fundamentals of Electronics Engineering — Major (End Semester) 2021 question paper

MMMUT Electrical Engineering previous year question paper for Fundamentals of Electronics Engineering (BEC-101), semester 1, Major (End Semester) 2021. All 24 questions are listed below, each with a written answer on Nexsus.

Paper details

  • Subject: Fundamentals of Electronics Engineering (BEC-101)
  • Branch: Electrical Engineering
  • Semester: 1
  • Exam: Major (End Semester) 2021
  • Questions: 24

Questions asked in Fundamentals of Electronics Engineering Major (End Semester) 2021

  1. Q1(a). Sketch the transfer characteristic of JFET? [2 marks]
  2. Q1(b). Convert the decimal number 151.75 to binary. [2 marks]
  3. Q1(c). How does avalanche breakdown differ from zener breakdown? [2 marks]
  4. Q1(d). What is meant by fermi level in semiconductor? Where does the fermi level lie in an intrinsic semiconductor [2 marks]
  5. Q1(e). Define dynamic resistance of a p-n junction diode in forward biased condition. [2 marks]
  6. Q1(f). An op-amp has a common mode gain of 0.01 and a differential mode gain of 10^5, find the common mode rejection ratio (CMRR). [2 marks]
  7. Q1(g). Explain the characteristics of an ideal operational amplifier. [2 marks]
  8. Q2(a). Draw & explain the V-I characteristic of a P-N junction diode. How does the conductivity and resistivity of the semiconductor materials depend upon temperature? [5 marks]
  9. Q2(b). Explain half wave rectifier with suitable diagram. A half-wave rectifier is used to supply 50V DC to a resistive load of 800 Ω. The diode has a resistance of 25 Ω. Calculate A.C voltage required. [5 marks]
  10. Q2(c). Derive the relation between α and β for a transistor. For an npn transistor, α=0.995 and Ic=10m A. Find Iβ and Ic? [5 marks]
  11. Q3(a). Explain the working of CB n-p-n Transistor configuration and draw input and output characteristics. Show that ICBO = ICEO/ (1-α) at IB= 0 [5 marks]
  12. Q3(b). Find the transistor shown in circuit, whether it is in active region or in saturation region. [5 marks]
  13. Q3(c). Explain the concept of DC load line of BJT. Why operating point must be in middle of Load line? [5 marks]
  14. Q4(a). In the given circuit, calculate the values of: i. ID ii. VDS iii. VGG iv. VD v. VS [5 marks]
  15. Q4(b). Explain the construction and working of n-type enhancement MOSFET and also Differentiate between BJT and FET. [5 marks]
  16. Q4(c). Reduce the following function in SOP form using K-Map. F= Σ (0,1,2,3,7,8,10) + Σ (5,6,11,15) [5 marks]
  17. Q5(a). For the op-amp shown, the output voltage Vo = 40 V1 - 39.8 V2. Find the CMRR value of op-amp. [5 marks]
  18. Q5(b). Derive and explain the Integrator and Summing amplifier using OP-AMP. [5 marks]
  19. Q5(c). Draw and explain the working of Digital Multimeter (DMM) and Digital Voltmeter (DVM) on the basis of block diagram. [5 marks]
  20. QQ1. Attempt any Five parts of the following.
  21. QQ2. Attempt any Two parts of the following.
  22. QQ3. Attempt any Two parts of the following.
  23. QQ4. Attempt any Two parts of the following.
  24. QQ5. Attempt any Two parts of the following